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DATA SHEET
PHOTO DIODE
NDL5471R Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 120 m InGaAs PIN PHOTO DIODE RECEPTACLE MODULE
DESCRIPTION
The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with high efficiency.
FEATURES
* Small dark current * High quantum efficiency * Cut-off frequency * Detecting area size * Low operating voltage ID = 0.1 nA
= 86 % @ = 1 300 nm = 80 % @ = 1 550 nm
fC = 1.5 GHz MIN.
120 m
PACKAGE DIMENSIONS NDL5471RC
for FC Connector 2- 4 Depth1.5 2- 2.2
3.5 8.90.1
in millimeters
NDL5471RD
for SC Connector 2- 2.3
7.4 9.40.1
13.440.1 190.1
12.80.3 18.00.1 22.00.3
4-C1.0
3.4 4.4 2.00.1
12.5 MIN. 6.00.1
8.00.1
C0.5 M8x0.75
2.0 6.8
PIN CONNECTIONS
Case 4 3 Cathode
2.0 6.8
3
41
1
Anode
3
4
1
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P10263EJ4V0DS00 (4th edition) Date Published April 1999 NS CP(K) Printed in Japan
The mark * shows major revised points.
(c)
12.5 MIN. 6.00.1
2.00.1 14.20.2
8.5 7.92
1995, 1999
NDL5471R Series
ORDERING INFORMATION
Part Number NDL5471RC NDL5471RD Device Type FC type receptacle module SC type receptacle module
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified)
Parameter Reverse Voltage Forward Current Reverse Current Optical Input Power Operating Case Temperature
Storage Temperature
Symbol VR IF IR Pin TC Tstg
Ratings 20 10 0.5 8 -40 to +85 -40 to +85
Unit V mA mA mW C C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 C)
Parameter Dark Current Terminal Capacitance Quantum Efficiency Symbol ID Ct VR = 5 V VR = 5 V, f = 1.0 MHz = 1 300 nm, VR = 5 V = 1 550 nm, VR = 5 V Responsivity S = 1 300 nm, VR = 5 V = 1 550 nm, VR = 5 V Cut-off Frequency fC VR = 5 V, RL = 50 , -3dB 1.5 0.78 75 Conditions MIN. TYP. 0.1 1.1 86 80 0.89 1.0 GHz A/W MAX. 1.0 1.5 Unit nA pF %
2
Data Sheet P10263EJ4V0DS00
NDL5471R Series
TYPICAL CHARACTERISTICS (TC = 25 C, unless otherwise specified)
WAVELENGTH DEPENDENCE OF QUANTUM EFFICIENCY
Responsivity (Relative Value) S/S (%)
100 10
TEMPERATURE DEPENDENCE OF RESPONSIVITY
= 1 300 nm
Quantum Efficiency (%)
80
60
0
40
20 0 0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-10 -60
-40
-20
0
20
40
60
80
100
Wavelength ( m)
Case Temperature TC (C)
REVERSE VOLTAGE DEPENDENCE OF DARK CURRENT
10 TC = +75 C 10
TEMPERATURE DEPENDENCE OF DARK CURRENT
VR = 5 V 1.0
Dark Current ID (nA)
+25 C 0.1 0 C -25 C 0.01
Dark Current ID (nA)
1.0
+50 C
0.1
0.01
0.001 0
10 Reverse Voltage VR (V)
20
0.001 -60 -40 -20
0
20
40
60
80
100
Case Temperature TC (C)
FREQUENCY RESPONSE
5 VR = 10 V = 1 300 nm RL = 50
REVERSE VOLTAGE DEPENDENCE OF TERMINAL CAPACITANCE
f = 1.0 MHz
Terminal Capacitance Ct (pF)
Response (3dB/div.)
1
0
2.5 Frequency f (GHz)
5.0
0.5 0.01
0.1
1
10
100
Reverse Voltage VR (V)
Remark The graphs indicate nominal characteristics.
Data Sheet P10263EJ4V0DS00
3
NDL5471R Series
InGaAs PIN-PD
Absolute maximum ratings Part number Pin (mW) NDL5421P/P1/P2 8 TC (C) Tstg (C) Detecting area size (m) Typical characteristics (TC = 25C) ID (nA) VR (V) 5 TYP. 0.1 Ct (pF) VR (V) 5 TYP. 0.7 S (A/W) fC Package
(nm)
1300 1550
TYP. (GHz) MIN. 0.89 0.94 0.89 1.00 0.89 0.94 0.89 1.00 0.85 2.5 Coaxial 1.5 Receptacle 2.5 2.5 Butterfly with AMP Coaxial 2.5 Coaxial
-40 to +85 -40 to +85
50
NDL5422P
-
-40 to +70 -40 to +85
50
5
0.1
-
-
1300 1550
NDL5461P/P1/P2
8
-40 to +85 -40 to +85
80
5
0.1
5
1.0
1300 1550
NDL5471RC/RD
8
-40 to +85 -40 to +85
120
5
0.1
5
1.1
1300 1550
NDL5481P/P1/P2
8
-40 to +85 -40 to +85
80
10
0.1
10
0.7
1300
4
Data Sheet P10263EJ4V0DS00
NDL5471R Series
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grades on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor selection guide Document No. C11159E C11531E C10535E X10679E
Data Sheet P10263EJ4V0DS00
5
NDL5471R Series
[MEMO]
6
Data Sheet P10263EJ4V0DS00
NDL5471R Series
[MEMO]
Data Sheet P10263EJ4V0DS00
7
NDL5471R Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal.
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative.
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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